st303s series inverter grade thyristors stud version 300a 1 bulletin i25173 rev. b 03/94 www.irf.com features all diffused design center amplifying gate guaranteed high dv/dt guaranteed high di/dt high surge current capability low thermal impedance high speed performance typical applications inverters choppers induction heating all types of force-commutated converters i t(av) 300 a @ t c 65 c i t(rms) 471 a i tsm @ 50hz 7950 a @ 60hz 8320 a i 2 t@ 50hz 316 ka 2 s @ 60hz 288 ka 2 s v drm /v rrm 400 to 1200 v t q range (*) 10 to 30 s t j - 40 to 125 c parameters st303s units major ratings and characteristics (*) t q = 10 to 20s for 400 to 800v devices t q = 15 to 30s for 1000 to 1200v devices case style to-209ae (to-118)
st303s series 2 bulletin i25173 rev. b 03/94 www.irf.com st303s 50 voltage v drm /v rrm , maximum v rsm , maximum i drm /i rrm max. type number code repetitive peak voltage non-repetitive peak voltage @ t j = t j max. vvma 04 400 500 08 800 900 10 1000 1100 12 1200 1300 electrical specifications voltage ratings frequency units 50hz 670 470 1050 940 5240 4300 400hz 480 330 1021 710 1800 1270 1000hz 230 140 760 470 730 430 a 2500hz 35 - 150 - 90 - recovery voltage vr 50 50 50 50 50 50 voltage before turn-on vd v drm v drm v drm rise of on-state current di/dt 50 50 - - - - a/ m s case temperature 40 65 40 65 40 65 c equivalent values for rc circuit 10 w / 0.47f 10 w / 0.47f 10 w / 0.47f i tm 180 o el 180 o el 100 m s i tm i tm current carrying capability v i t(av) max. average on-state current 300 a 180 conduction, half sine wave @ case temperature 65 c i t(rms) max. rms on-state current 471 dc @ 45c case temperature i tsm max. peak, one half cycle, 7950 t = 10ms no voltage non-repetitive surge current 8320 a t = 8.3ms reapplied 6690 t = 10ms 100% v rrm 7000 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 316 t = 10ms no voltage initial t j = t j max 288 t = 8.3ms reapplied 224 t = 10ms 100% v rrm 204 t = 8.3ms reapplied i 2 ? t maximum i 2 ? t for fusing 3160 ka 2 ? s t = 0.1 to 10ms, no voltage reapplied parameter st303s units conditions on-state conduction ka 2 s
st303s series 3 bulletin i25173 rev. b 03/94 www.irf.com v tm max. peak on-state voltage 2.16 i tm = 1255a, t j = t j max, t p = 10ms sine wave pulse v t(to)1 low level value of threshold voltage v t(to)2 high level value of threshold voltage r t 1 low level value of forward slope resistance r t 2 high level value of forward slope resistance i h maximum holding current 600 t j = 25c, i t > 30a i l typical latching current 1000 t j = 25c, v a = 12v, ra = 6 w, i g = 1a parameter st303s units conditions on-state conduction 1.44 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 1.46 (i > p x i t(av) ), t j = t j max. v 0.57 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 0.56 (i > p x i t(av) ), t j = t j max. m w ma di/dt max. non-repetitive rate of rise t j = t j max, v drm = rated v drm of turned-on current i tm = 2 x di/dt t j = 25c, v dm = rated v drm , i tm = 50a dc, t p = 1s resistive load, gate pulse: 10v, 5 w source t j = t j max, i tm = 550a, commutating di/dt = 40a/s v r = 50v, t p = 500s, dv/dt: see table in device code switching parameter st303s units conditions 1000 a/s t d typical delay time 0.80 s min max dv/dt maximum critical rate of rise of t j = t j max, linear to 80% v drm , higher value off-state voltage available on request i rrm max. peak reverse and off-state i drm leakage current parameter st303s units conditions blocking 500 v/ m s 50 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 60 p g(av) maximum average gate power 10 i gm max. peak positive gate current 10 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt max. dc gate current required to trigger v gt max. dc gate voltage required to trigger i gd max. dc gate current not to trigger 20 ma v gd max. dc gate voltage not to trigger 0.25 v triggering parameter st303s units conditions 20 5 vt j = t j max, t p 5ms 200 ma 3v t j = 25c, v a = 12v, ra = 6 w t j = t j max, rated v drm applied (*) t q = 10 to 20s for 400 to 800v devices; t q = 15 to 30s for 1000 to 1200v devices. t q max. turn-off time (*) 10 30 wt j = t j max, f = 50hz, d% = 50
st303s series 4 bulletin i25173 rev. b 03/94 www.irf.com t j max. junction operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thjc max. thermal resistance, junction to case 0.10 dc operation r thcs max. thermal resistance, case to heatsink 0.03 mounting surface, smooth, flat and greased t mounting torque, 10% 48.5 nm (425) (ibf-in) wt approximate weight 535 g case style to-209ae (to-118) see outline table parameter st303s units conditions thermal and mechanical specifications c k/w non lubricated threads d r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) ordering information table 5 68 9 st 30 3 s 12 p f n 0 3 4 7 device code 1 2 10 180 0.011 0.008 120 0.013 0.014 90 0.017 0.018 k/w t j = t j max. 60 0.025 0.026 30 0.041 0.042 conduction angle sinusoidal conduction rectangular conduction units conditions 1 - thyristor 2 - essential part number 3 - 3 = fast turn off 4 - s = compression bonding stud 5 - voltage code: code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 3/4" 16unf-2a m = stud base metric threads m24 x 1.5 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet terminals (gate and aux. cathode leads) 1 = fast-on terminals (gate and aux. cathode leads) 3 = threaded top terminal 3/8" 24unf-2a - critical dv/dt: none = 500v/sec (standard value) l = 1000v/sec (special selection) only for 1000/1200v dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 t q (s) 10 cn dn en fn * hn 12 cm dm em fm hm 15 cl dl el fl * hl 20 ck dk ek fk * hk t q (s) 15 cl -- -- -- -- 18 cp dp -- -- -- 20 ck dk ek fk * hk 25 cj dj ej fj * hj 30 -- dh eh fh hh up to 800v * standard part number. all other types available only on request. 10
st303s series 5 bulletin i25173 rev. b 03/94 www.irf.com outline table case style to-209ae (to-118) with top thread terminal 3/8" all dimensions in millimeters (inches) red cathode red silicon rubber 10.5 (0.41) 245 (9.65) 10 (0.39) white gate 4.3 (0.17) dia. ceramic housing white shrink nom. 47 ( 1.85) max. 245 (9.65) 38 (1.50) max. dia. * for metric device: m24 x 1.5 - lenght screw 21 (0.83) max. 22 (0.87) max. max. 21 (0.82) max. sw 45 2 flexible lead 4.5 (0.18) max. c.s. 50mm (0.078 s.i.) 255 (10.04) red shrink 2 2 ( 0 . 8 6 ) mi n . 49 (1.92) max. 3/4"16 unf-2a 27.5 (1.08) 9 . 5 ( 0 . 3 7 ) m i n . fast-on terminals case style to-209ae (to-118) all dimensions in millimeters (inches) 47 (1. 85) 27.5 (1.08) 77. 5 (3.05) 80. 5 (3.17) 38 (1.5) dia. max. max. max. max. ceramic housing sw 45 * for metric device: m24 x 1.5 - lenght screw 21 (0.83) max. 21 (0.83) 3/4"-16unf-2a * 25 (0.98) 3/8"-24unf-2a 17 (0.67) dia. amp. 280000-1 ref-250
st303s series 6 bulletin i25173 rev. b 03/94 www.irf.com fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0 . 0 1 k / w - d e l t a r t h s a 0 . 3 k / w 0 . 5 k / w 0 . 2 k / w 0 . 1 6 k / w 0 . 1 2 k / w 0 . 0 6 k / w 0 . 0 8 k / w 0 . 0 3 k / w 0 100 200 300 400 500 600 0 50 100 150 200 250 300 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w) average on-sta te current (a) st303s series t = 125c j 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0 . 0 1 k / w - d e l t a r t h s a 0 . 3 k / w 0 . 5 k / w 0 . 2 k / w 0 . 1 2 k / w 0 . 0 6 k / w 0 . 0 3 k / w 0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 250 300 350 400 450 500 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on -state curr en t (a) st303s series t = 125c j fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 maximum allowable case temperature ( c) 30 60 90 120 180 average on-state current (a) conduction angle st 303s series r (dc) = 0.10 k/w thjc 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c) conduction period st303s series r (dc) = 0.10 k/w thjc
st303s series 7 bulletin i25173 rev. b 03/94 www.irf.com fig. 8 - thermal impedance z thjc characteristic fig. 9 - reverse recovered charge characteristics fig. 10 - reverse recovery current characteristics fig. 7 - on-state voltage drop characteristics 100 1000 10000 12345678 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125 c j st 303s ser ies 20 40 60 80 100 120 140 160 180 10 20 30 40 50 60 70 80 90 100 rate of fall of on-state current - di/dt (a/ s) i = 500 a 300 a 200 a 100 a 50 a maximum reverse recovery current - irr (a) st303s series t = 125 c j tm 80 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 rate of fall of on-sta te cur ren t - di/dt (a/ s) i = 500 a 300 a 200 a 100 a 50 a maximum reverse recovery charge - qrr ( c) st303s series t = 125 c j tm 0.001 0. 01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) th jc transient thermal impedance z (k/w) steady state value r = 0.10 k/w (dc operation) thjc st303s series fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 3000 3500 4000 4500 5000 5500 6000 6500 7000 1 10 100 numb er of e qu al am pli tud e hal f cy cle current pul ses (n) peak half sine wave on-state current (a) in itial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st303s series at any rated load condition and with rated v applied following surge. rrm 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 0.01 0.1 1 pulse train duration (s) versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) initial t = 125 c no voltage reapplied rated v reapplied rrm j st 303s series maximum non repetitive surge current
st303s series 8 bulletin i25173 rev. b 03/94 www.irf.com fig. 13 - frequency characteristics fig. 12 - frequency characteristics 1e0 1e1 1e2 1e3 1e4 1e11e21e31e4 100 1500 200 pulse basewidth ( s) peak on-sta te current (a) 2500 400 1000 50 hz 500 snubber ci rcuit r = 10 ohms c = 0.47 f v = 80% v s s d drm st303s series tra pezoid al pu lse t = 40c di/dt = 50a/s c 1e4 2000 1e11e21e31e4 50 h z 400 100 1000 1500 200 pulse basewidth ( s) 500 snub ber ci rcuit r = 10 ohms c = 0.47 f v = 80% v s s d drm st303s series trapezoidal pulse t = 65c di/dt = 50a/s c 2000 1e1 1e0 1e1 1e2 1e3 1e4 1e11e21e31e4 50 hz 400 2500 100 1000 1500 200 pulse basewidth ( s) peak on-sta te current (a) 2000 snubber circuit r = 10 ohms c = 0.47 f v = 80% v s s d dr m st303s series trapezoidal pulse t = 40c di/dt = 100a/s c tp 1e4 500 1e1 1e2 1e3 1e4 50 hz 400 100 1000 1500 200 pulse basewidth ( s) st303s series trapezoidal pulse t = 65 c di/dt = 100a/s c snubber circuit r = 10 ohms c = 0.47 f v = 80% v s s d dr m 2000 tp 500 1e1 fig. 11 - frequency characteristics 1e1 1e2 1e3 1e4 50 hz 400 100 pulse basewidth ( s) 1000 1500 200 500 st3 0 3s se r ie s si nus o idal pul se t = 65 c c snubber circuit r = 10 ohms c = 0.47 f v = 80% v s s d dr m tp 1e1 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse basew idth ( s) peak on-state current (a) 1000 1500 200 500 snubber circuit r = 10 ohms c = 0.47 f v = 80% v s s d dr m 2000 st303s series sinusoidal pulse t = 40c c 1e4 tp
st303s series 9 bulletin i25173 rev. b 03/94 www.irf.com fig. 15 - gate characteristics 1e1 1e2 1e3 1e4 1e5 1e11e21e31e4 pulse basewidth ( s) 20 joules p er pulse 2 1 peak on-state current (a) 0.5 10 5 3 0.4 st303s series sinusoida l pu lse tp 1e4 1e1 1e2 1e3 1e4 pulse basewidth ( s) 20 joules per pulse 2 1 0.5 10 5 st303s series recta ngular p ulse di/dt = 50a/ s tp 1e1 3 0.4 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) tj=25 c tj=125 c tj= -40 c (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) rectangular gate pulse a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) pgm = 10w, tp = 20ms (2) pgm = 20w, tp = 10ms (3) pgm = 40w, tp = 5ms (4) pgm = 60w, tp = 3.3ms (3) device: st303s series (4) fr equency limited by pg(av) fig. 14 - maximum on-state energy power loss characteristics
|
